ESMT
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to V
SS
Voltage on V
DD
supply relative to V
SS
Storage temperature
Power dissipation
Short circuit current
Symbol
V
IN
,V
OUT
V
DD
,V
DDQ
T
STG
P
D
I
OS
Value
-1.0 ~ 2.6
-1.0 ~ 2.6
-55 ~ + 150
0.7
50
M52D32321A
Unit
V
V
°
C
W
mA
Note:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0
°C
~ 70
°C
)
Parameter
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
Symbol
V
DD
,V
DDQ
V
IH
V
IL
V
OH
V
OL
I
IL
I
OL
Min
1.7
0.8 x V
DDQ
-0.3
V
DDQ
- 0.2
-
-10
-10
Typ
1.8
1.8
0
-
-
-
-
Max
1.9
V
DDQ
+0.3
0.3
-
0.2
10
10
Unit
V
V
V
V
V
uA
uA
Note
1
2
I
OH
=-0.1mA
I
OL
= 0.1mA
3
4
Note :
1.V
IH
(max) = 2.2V AC for pulse width
≤
3ns acceptable.
2.V
IL
(min) = -1.0V AC for pulse width
≤
3ns acceptable.
3.Any input 0V
≤
V
IN
≤
V
DDQ
, all other pins are not under test = 0V.
4.Dout is disabled, 0V
≤
V
OUT
≤
V
DDQ
.
CAPACITANCE
(VDD = 1.8V, TA = 25
°C
, f = 1MHz)
Pin
CLOCK
RAS , CAS ,
WE
, CS , CKE, DQM0~3
ADDRESS
DQ0 ~DQ15
Symbol
C
CLK
C
IN
C
ADD
C
OUT
Min
2.0
2.0
2.0
3.5
Max
4.0
4.0
4.0
6.0
Unit
pF
pF
pF
pF
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May 2009
Revision
:
1.6
3/30
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
