ESMT
AC OPERATING TEST CONDITIONS
(V
DD
=1.8V
±
0.1V,T
A
= 0 °C ~ 70 °C )
Parameter
Input levels (Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Output load condition
1.8V
M52D32321A
Value
0.9 x V
DDQ
/ 0.2
0.5 x V
DDQ
tr / tf = 1 / 1
0.5 x V
DDQ
See Fig.2
Unit
V
V
ns
V
Vtt =0.5x VDDQ
13.9K
50
Output
VOH(DC) = VDDQ-0.2V, IOH = -0.1mA
VOL(DC) = 0.2V, IOL = 0.1mA
10.6K
Output
Z0=50
20 pF
20 pF
(Fig.1) DC Output Load circuit
(Fig.2) AC Output Load Circuit
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Parameter
Row active to row active delay
RAS to CAS delay
Row precharge time
Row active time
@ Operating
@ Auto refresh
Symbol
-7
t
RRD
(min)
t
RCD
(min)
t
RP
(min)
t
RAS
(min)
t
RAS
(max)
t
RC
(min)
t
RFC
(min)
t
CDL
(min)
t
RDL
(min)
t
BDL
(min)
t
CCD
(min)
t
REF
(max)
CAS latency=3
CAS latency=2
65
65
1
2
1
1
64
2
1
14
22.5
20
45
100
90
90
Version
-10
20
30
30
50
ns
ns
ns
ns
us
ns
ns
CLK
CLK
CLK
CLK
ms
ea
1
1,6
2
2
2
3
5
4
1
1
1
1
Unit
Note
Row cycle time
Last data in to new col. Address delay
Last data in to row precharge
Last data in to burst stop
Col. Address to col. Address delay
Refresh period (4,096 rows)
Number of valid output data
Note:
1.
2.
3.
4.
5.
6.
The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and
then rounding off to the next higher integer.
Minimum delay is required to complete write.
All parts allow every cycle column address change.
In case of row precharge interrupt, auto precharge and read burst stop.
The earliest a precharge command can be issued after a Read command without the loss of data is CL+BL-2 clocks.
A maximum of eight consecutive AUTO REFRESH commands (with t
RFCmin
) can be posted to any given SDRAM, and
the maximum absolute interval between any AUTO REFRESH command and the next AUTO REFRESH command is
8x15.6
μ
s.)
A new command may be given t
RFC
after self refresh exit.
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May 2009
Revision
:
1.6
5/30
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
