HEXFET
Thermal Resistance
Parameter
Typ.
–––
0.50
–––
®
E
3205
Power MOSFET
Max.
0.75
–––
62
Units
°C/W
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
V
(BR)DSS
R
DS(on)
V
GS(th)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage current
Gate-to-Source Forward leakage
Gate-to-Source Reverse leakage
Total Gate Charge
Gate-to-Source charge
Gate-to-Drain ("Miller") charge
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
54
—
—
2.0
35
—
—
—
—
—
—
—
—
—
—
—
—
—
0.057
—
—
4.0
—
25
250
100
-100
146
35
54
—
—
—
—
—
V
V
GS
=0V,I
D
=
250uA
④
△
V
(BR)DSS
/
△
T
J
Breakdown Voltage Temp. Coefficient
V/ْC Reference to 25ْC,I
D
=1mA
V
S
μA
nA
V
DS
=V
GS
, I
D
=250μA
V
DS
=25V,I
D
=62A
V
DS
=55V,V
GS
=0V
V
DS
=44V,V
GS
=0V,T
J
=150ْC
V
GS
=20V
V
GS
=-20V
④
—
—
—
—
—
—
—
—
—
—
14
101
50
65
4.5
9.0 mΩ V
GS
=10V,I
D
=62A
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
I
D
=62A
V
DS
=44V
nC
V
GS
=10V See Fig.6 and 13
④
t
d(on)
t
r
t
d(off)
t
f
L
D
V
DD
=28V
I
D
=62A
nS
R
G
=4.5Ω
V
GS
=10V See Figure 10
④
Between lead,
6mm(0.25in.)
nH from package
and center of
die contact
V
GS
=0V
pF V
DS
=25V
f=1.0MH
Z
See Figure 5
mJ
I
AS
= 62A, L =138μH
L
S
C
iss
C
oss
Crss
E
AS
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy.
—
7.5
—
—
3247
—
—
—
781
211
—
—
—
1050 264
2
ESTEK [ Estek Electronics Co. Ltd ]
