HEXFET
Source-Drain Ratings and Characteristics
Parameter
Min.
Typ.
Max.
Units
®
E
3205
Power MOSFET
Test Conditions
I
S
I
SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
①
Reverse Recovery Time
.
.
—
—
—
—
—
—
—
—
69
143
110
A
390
1.3
V
nS
μC
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
=25ْC,I
S
=62A,V
GS
=0V
④
T
J
=25ْC,I
F
=52A
di/dt=100A/μs
④
V
SD
Diode Forward Voltage
t
rr
Q
rr
Reverse Recovery Charge
104
215
t
on
Forward Turn-on Time
Notes:
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + L
D
)
1.Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
2.Starting TJ = 25°C, L = 138μH
RG = 25Ω, IAS = 62A. (See Figure 12)
3. ISD
≤
62A, di/dt
≤
207A/μs, VDD
≤
V(BR)DSS,
TJ
≤
175°C
4.Pulse
width
δ
400μs; duty cycle
δ
2%.
Electrical Characteristics @ TJ = 25°C (unless otherwise
specified)
5.Calculated
continuous current based on maximum
allowable
junction temperature. Package limitation current is 75A.
6.This
is a typical value at device destruction and
represents
operation outside rated limits.
7.This
is a calculated value limited to TJ = 175°C.
3
ESTEK [ Estek Electronics Co. Ltd ]
