MMDL101T1
TYPICAL CHARACTERISTICS
1.0
100
I
R
, REVERSE LEAKAGE (
µA)
0.5
V
R
= 3.0 Vdc
0.2
0.1
0.07
0.05
I
F
, FORWARD CURRENT (mA)
0.7
10
T
A
= 85°C
T
A
= –40°C
1.0
T
A
= 25°C
MMBD110T1
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.02
MMBD110T1
0.01
30
40
50
60
70
80
90
100
110
120
130
T
A
, AMBIENT TEMPERATURE (°C)
V
F
, FORWARD VOLTAGE (VOLTS)
Figure 1. Reverse Leakage
Figure 2. Forward Voltage
1.0
1
1
10
C, CAPACITANCE (pF)
NF, NOISE FIGURE (dB)
0.9
9
8
7
6
5
4
3
2
1
LOCAL OSCILLATOR FREQUENCY = 1.0GHz
(Test Circuit Figure 5)
0.8
0.7
MMBD110T1
0.6
0
1.0
2.0
3.0
4.0
MMBD110T1
0.1
0.2
0.5
1.0
2.0
5.0
10
V
R
, REVERSE VOLTAGE (VOLTS)
P
LO
, LOCAL OSCILLATOR POWER (mW)
Figure 3. Capacitance
Figure 4. Noise Figure
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
DIODE IN
TUNED
MOUNT
NOTES ON TESTING AND SPECIFICATIONS
Note1—C
C
andC T are measured using a capacitance
bridge(Boonton Electronics Model 75A or
equivalent).
Note2—Noise figure measured with diode under test in
tuned diode mount using UHF noise source and
local oscillator (LO) frequency of 1.0 GHz.The
LO power is adjusted for 1.0 mW. I
F
amplifier
NF = 1.5 dB, f = 30MHz, see Figure 5.
NOISE
FIGURE METER
H.P. 342A
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
Figure 5. Noise Figure Test Circuit
S1–2/3
ETL [ E-TECH ELECTRONICS LTD ]
