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EM636165TS-6I/6IG 参数 Datasheet PDF下载

EM636165TS-6I/6IG图片预览
型号: EM636165TS-6I/6IG
PDF下载: 下载PDF文件 查看货源
内容描述: 1Mega ×16同步DRAM (SDRAM)的 [1Mega x 16 Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器
文件页数/大小: 73 页 / 756 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech
LDQM,
UDQM
Input
1M x 16 SDRAM
EM636165-XXI
Data Input/Output Mask:
LDQM and UDQM are byte specific, nonpersistent
I/O buffer controls. The I/O buffers are placed in a high-z state when
LDQM/UDQM is sampled HIGH. Input data is masked when LDQM/UDQM is
sampled HIGH during a write cycle. Output data is masked (two-clock latency)
when LDQM/UDQM is sampled HIGH during a read cycle. UDQM masks DQ15-
DQ8, and LDQM masks DQ7-DQ0.
DQ0-DQ15 Input/Output
Data I/O:
The DQ0-15 input and output data are synchronized with the positive
edges of CLK. The I/Os are byte-maskable during Reads and Writes.
NC
V
DDQ
-
Supply
No Connect:
These pins should be left unconnected.
DQ Power:
Provide isolated power to DQs for improved noise immunity.
( 3.3V
±
0.3V )
V
SSQ
Supply
DQ Ground:
Provide isolated ground to DQs for improved noise immunity.
(0V)
V
DD
V
SS
Supply
Supply
Power Supply:
+3.3V
±
0.3V
Ground
Preliminary
4
Rev. 1.1
Apr. 2005