EtronTech
D.C. Characteristics
(VDD = 2.8V
±
5%, TA = 0~70
°C)
4Mx32 DDR SDRAM
EM6A9320
4
5
Parameter & Test Condition
OPERATING CURRENT :
One bank; Active-
Precharge; t
RC
=t
RC
(min); t
CK
=t
CK
(min); DQ,DM and
DQS inputs changing once per clock cycle; Address
and control inputs changing once every two clock
cycles.
OPERATING CURRENT :
One bank; Active-Read-
Precharge; BL=4; CL=4; tRCDRD=4*t
CK
;
t
RC
=t
RC
(min); t
CK
=t
CK
(min); lout=0mA; Address and
control inputs changing once per clock cycle
PRECHARGE POWER-DOWN STANDBY
CURRENT:
All banks idle; power-down mode;
t
CK
=t
CK
(min); CKE=LOW
IDLE STANDLY CURRENT :
CKE = HIGH;
CS#=HIGH(DESELECT); All banks idle; t
CK
=t
CK
(min);
Address and control inputs changing once per clock
cycle; V
IN
=V
REF
for DQ, DQS and DM
ACTIVE POWER-DOWN STANDBY CURRENT :
one
bank active; power-down mode; CKE=LOW;
t
CK
=t
CK
(min)
ACTIVE STANDBY CURRENT :
CS#=HIGH;CKE=HIGH; one bank active ;
t
RC
=t
RC
(max);t
CK
=t
CK
(min);Address and control inputs
changing once per clock cycle; DQ,DQS,and DM
inputs changing twice per clock cycle
OPERATING CURRENT BURST READ :
BL=2;
READS; Continuous burst; one bank active; Address
and control inputs changing once per clock cycle;
t
CK
=t
CK
(min); lout=0mA;50% of data changing on
every transfer
OPERATING CURRENT BURST Write :
BL=2;
WRITES; Continuous Burst ;one bank active; address
and control inputs changing once per clock cycle;
t
CK
=t
CK
(min); DQ,DQS,and DM changing twice per
clock cycle; 50% of data changing on every transfer
AUTO REFRESH CURRENT :
t
RC
=t
RFC
(min);
t
CK
=t
CK
(min)
SELF REFRESH CURRENT:
Sell Refresh Mode ;
CKE<=0.2V;t
CK
=t
CK
(min)
BURST OPERATING CURRENT 4 bank operation:
Four bank interleaving READs; BL=4;with Auto
Precharge; t
RC
=t
RC
(min); t
CK
=t
CK
(min); Address and
control inputschang only during Active, READ , or
WRITE command
Symbol
2.8 3.0 3.3 3.5 3.6
Max
Unit
IDD0
330 320 280 260 250 180 160 mA
IDD1
450 440 380 360 340 260 240 mA
IDD2P
50
50
50
50
50
45
40 mA
IDD2N 100 100 100 100 100
80
80 mA
IDD3P
50
50
50
50
50
45
40 mA
IDD3N 140 135 120 110 110 100 100 mA
IDD4R 560 540 480 450 450 440 420 mA
IDD4W 470 450 400 370 360 300 270 mA
IDD5
IDD6
430 430 420 410 390 300 280 mA
4
4
4
4
4
3
3 mA
IDD7
920 890 780 720 710 650 550 mA
Note:
1. Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device.
2. All voltages are referenced to V
SS
.
3. Power-up sequence is described in previous page.
9
Rev 0.6
May. 2006
ETRON [ ETRON TECHNOLOGY, INC. ]
