Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP40R12KE3G
Vorläufige Daten
Preliminary data
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
V
ISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
T
vj
= 150°C,
T
vj
= 150°C
T
vj
= 150°C
T
vj
= 150°C,
T
C
= 25°C
V
R
= 1600 V
I
F
= 40 A
V
F
V
(TO)
r
T
I
R
R
AA'+CC'
min.
-
-
-
-
-
typ.
1,2
-
-
2
4
max.
-
0,8
10,5
-
-
V
V
mΩ
mA
mΩ
Transistor Wechselrichter/ Transistor Inverter
V
GE
= 15V, T
vj
= 25°C,
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
V
GE
= 15V, T
vj
= 125°C,
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut off current
Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
V
CE
= V
GE
,
T
vj
= 25°C,
min.
I
C
=
I
C
=
I
C
=
40 A
40 A
1,5 mA
V
CE sat
-
-
5,0
-
-
-
typ.
1,8
2,15
5,8
2,5
-
-
max.
2,3
-
6,5
-
5
400
V
V
V
nF
mA
nA
V
GE(TO)
C
ies
f = 1MHz, T
vj
= 25°C
V
CE
= 25 V, V
GE
= 0 V
V
GE
= 0V,
T
vj
= 25°C, V
CE
=
1200 V
I
CES
I
GES
V
CE
= 0V, V
GE
=20V, T
vj
=25°C
I
C
= I
Nenn
,
V
CC
=
600 V
27 Ohm
27 Ohm
600 V
27 Ohm
27 Ohm
600 V
27 Ohm
27 Ohm
600 V
27 Ohm
27 Ohm
600 V
27 Ohm
45 nH
600 V
27 Ohm
45 nH
27 Ohm
720 V
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
,
V
CC
=
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
,
V
GE
= ±15V, T
vj
= 25°C,
V
GE
= ±15V, T
vj
= 125°C,
I
C
= I
Nenn
,
V
GE
= ±15V, T
vj
= 25°C,
V
GE
= ±15V, T
vj
= 125°C,
I
C
= I
Nenn
,
V
GE
= ±15V, T
vj
= 125°C,
V
CC
=
R
G
=
R
G
=
V
CC
=
R
G
=
R
G
=
V
CC
=
R
G
=
L
S
=
I
C
= I
Nenn
,
V
CC
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
L
S
=
R
G
=
V
CC
=
t
d,on
-
-
85
90
30
45
420
520
65
90
6
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
mWs
t
r
-
-
-
-
-
-
-
t
d,off
t
f
E
on
E
off
-
4,2
-
mWs
t
P
≤
10µs, V
GE
≤
15V,
T
vj
≤125°C,
I
SC
-
160
-
A
2(11)
DB-PIM-IGBT3_1.xls
EUPEC [ EUPEC GMBH ]
