Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FP40R12KE3G
Vorläufige Daten
Preliminary data
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
min.
Modulinduktivität
stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
Diode Wechselrichter/ Diode Inverter
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
V
GE
= 0V, T
vj
= 25°C,
I
F
=
V
GE
= 0V, T
vj
= 125°C,
I
F
=
I
F
=I
Nenn
,
- di
F
/dt =
V
GE
= -10V, T
vj
= 25°C, V
R
=
V
GE
= -10V, T
vj
= 125°C, V
R
=
I
F
=I
Nenn
,
- di
F
/dt =
V
GE
= -10V, T
vj
= 25°C, V
R
=
V
GE
= -10V, T
vj
= 125°C, V
R
=
I
F
=I
Nenn
,
- di
F
/dt =
V
GE
= -10V, T
vj
= 25°C, V
R
=
V
GE
= -10V, T
vj
= 125°C, V
R
=
40 A
40 A
900 A/µs
600 V
600 V
900 A/µs
600 V
600 V
900 A/µs
600 V
600 V
V
F
T
C
= 25°C
L
σCE
R
CC'+EE'
-
-
typ.
-
7
max.
100
-
nH
mΩ
min.
-
-
-
-
-
-
-
-
typ.
1,75
1,75
39
38
4,2
7,8
1,35
2,8
max.
2,3
-
-
-
-
-
-
-
V
V
A
A
µAs
µAs
mWs
mWs
I
RM
Q
r
E
RQ
Transistor Brems-Chopper/ Transistor Brake-Chopper
V
GE
= 15V, T
vj
= 25°C,
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
V
GE
= 15V, T
vj
= 125°C,
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
collector-emitter cut off current
Gate-Emitter Reststrom
gate-emitter leakage current
Schaltverluste und -bedingungen
Switching losses and conditions
V
CE
= V
GE
,
T
vj
= 25°C,
min.
I
C
=
I
C
=
I
C
=
40 A
40 A
1,5 mA
V
CE sat
-
-
5,0
-
-
-
typ.
1,8
2,15
5,8
2,5
5,0
-
max.
2,3
-
6,5
-
-
400
V
V
V
nF
mA
nA
V
GE(TO)
C
ies
f = 1MHz, T
vj
= 25°C
V
CE
= 25 V, V
GE
= 0 V
V
GE
= 0V, T
vj
= 25°C, V
CE
=
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
siehe Wechselrichter in diesem Datenblatt
see inverter in this datasheet
1200 V
I
CES
I
GES
Diode Brems-Chopper/ Diode Brake-Chopper
T
vj
= 25°C,
Durchlaßspannung
forward voltage
T
vj
= 125°C,
Schaltverluste und -bedingungen
Switching losses and conditions
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand
rated resistance
Abweichung von R
100
deviation of R
100
Verlustleistung
power dissipation
B-Wert
B-value
min.
I
F
=
I
F
=
40 A
40 A
V
F
-
-
typ.
2,35
2,55
max.
2,8
-
V
V
siehe Wechselrichter in Dbl FP15R12KE3
see inverter in datasheet FP15R12KE3
min.
T
C
= 25°C
T
C
= 100°C, R
100
= 493
Ω
T
C
= 25°C
R
2
= R
1
exp [B(1/T
2
- 1/T
1
)]
R
25
∆R/R
P
25
B
25/50
-
-5
typ.
5
max.
-
5
20
kΩ
%
mW
K
3375
3(11)
DB-PIM-IGBT3_1.xls
EUPEC [ EUPEC GMBH ]
