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FDD6690A 参数 Datasheet PDF下载

FDD6690A图片预览
型号: FDD6690A
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道逻辑电平MOSFET PowerTrenchTM [N-Channel, Logic Level, PowerTrenchTM MOSFET]
分类和应用:
文件页数/大小: 6 页 / 118 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDD6690A
Electrical Characteristics
Symbol
I
S
V
SD
t
rr
Q
rr
T
A
= 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
2.3
A
V
nS
nC
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
F
= 12 A,
I
S
= 2.3 A
(Note 2)
d
iF
/d
t
= 100 A/µs
0.76
24
13
1.2
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) R
θJA
= 45°C/W when mounted on a
1in pad of 2 oz copper
2
b) R
θJA
= 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
P
D
R
DS(ON)
3.
Maximum current is calculated as:
where P
D
is maximum power dissipation at T
C
= 25°C and R
DS(on)
is at T
J(max)
and V
GS
= 10V. Package current limitation is 21A
FDD6690A Rev. EW)