FDD6690A
Typical Characteristics
10
1800
I
D
= 12 A
V
GS
, GATE-SOURCE VOLTAGE (V)
8
V
DS
= 10V
20V
CAPACITANCE (pF)
f = 1MHz
V
GS
= 0 V
1500
C
iss
1200
6
15V
900
4
600
C
oss
300
2
C
rss
0
0
5
10
15
Q
g
, GATE CHARGE (nC)
20
25
0
0
5
10
15
20
25
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics
1000
100
P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics
100
I
D
, DRAIN CURRENT (A)
R
DS(ON)
LIMIT
1ms
10ms
100µs
80
SINGLE PULSE
R
θJA
= 96°C/W
T
A
= 25°C
10
1s
10
1
V
GS
= 4.5V
SINGLE PULSE
R
θJA
= 96
o
C/W
T
A
= 25
o
C
DC
100ms
60
40
0.1
20
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0
0.01
0.1
1
t
1
, TIME (sec)
10
100
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 96 °C/W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
0.01
0.001
SINGLE PULSE
0.0001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6690A Rev. EW)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
