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2MBI300VD-120-50 参数 Datasheet PDF下载

2MBI300VD-120-50图片预览
型号: 2MBI300VD-120-50
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT模块( V系列) 1200V / 300A / 2在一个封装 [IGBT MODULE (V series) 1200V / 300A / 2 in one package]
分类和应用: 双极性晶体管
文件页数/大小: 6 页 / 403 K
品牌: FUJI [ FUJI ELECTRIC ]
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http://www.fujielectric.com/products/semiconductor/
2MBI300VD-120-50
IGBT MODULE (V series)
1200V / 300A / 2 in one package
High speed switching
Voltage drive
Low Inductance module structure
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Symbols
V
CES
V
GES
Ic
Collector current
IGBT Modules
Features
Applications
Maximum Ratings and Characteristics
Items
Collector-Emitter voltage
Gate-Emitter voltage
Inverter
Conditions
Tc=80°C
Tc=25°C
Continuous
1ms
1ms
1 device
Ic pulse
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Operating junction temperature (under switching conditions)
T
jop
Case temperature
T
C
Storage temperature
Tstg
Isolation voltage between terminal and copper base (*1)
V
iso
Mounting (*2)
Screw torque
-
Terminals (*3)
AC : 1min.
Maximum ratings
1200
±20
300
360
600
300
600
2205
175
150
125
-40 ~ +125
2500
6.0
5.0
Units
V
V
W
°C
VAC
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Recommendable Value : 3.0-6.0 Nm (M5 or M6)
Note *3: Recommendable Value : 2.5-5.0 Nm (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Symbols
I
CES
I
GES
V
GE (th)
V
CE (sat)
(terminal)
V
CE (sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
V
F
(terminal)
V
F
(chip)
trr
Symbols
Rth(j-c)
Rth(c-f)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Conditions
V
GE
= 0V, V
CE
= 1200V
V
CE
= 0V, V
GE
= ±20V
V
CE
= 20V, I
C
= 300mA
V
GE
= 15V
I
C
= 300A
V
CE
= 10V, V
GE
= 0V, f = 1MHz
V
CC
= 600V
I
C
= 300A
V
GE
= ±15V
R
G
= 1.8Ω
Tj = 150°C
V
GE
= 0V
I
F
= 300A
I
F
= 300A
Conditions
IGBT
FWD
with Thermal Compound
Collector-Emitter saturation voltage
Inverter
Input capacitance
Turn-on time
Turn-off time
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Forward on voltage
Reverse recovery time
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Characteristics
min.
typ.
max.
-
-
2.0
-
-
400
6.0
6.5
7.0
-
2.00
2.45
-
2.35
-
2.40
-
1.85
2.10
-
2.15
-
2.00
-
24.0
-
-
0.60
-
-
0.20
-
-
0.05
-
-
0.80
-
-
0.08
-
-
1.85
2.25
-
2.00
-
1.95
-
1.70
1.95
-
1.85
-
1.80
-
0.15
-
Characteristics
min.
typ.
max.
-
-
0.068
-
-
0.110
-
0.013
-
Units
mA
nA
V
V
nF
µs
V
µs
Units
°C/W
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device) (*4)
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1