2MBI300VD-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
800
800
VGE=20V 15V
12V
VGE= 20V
15V
600
600
400
200
0
12V
400
10V
10V
8V
200
8V
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
Collector-Emitter voltage: VCE [V]
Collector current vs. Collector-Emitter voltage (typ.)
VGE= 15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25°C / chip
800
10
8
Tj=25°C 125°C 150°C
600
6
400
200
0
4
Ic=600A
Ic=300A
Ic=150A
2
0
5
10
15
20
25
0
1
2
3
4
Collector-Emitter Voltage: VCE [V]
Gate-Emitter Voltage: VGE [V]
Gate Capacitance vs. Collector-Emitter Voltage
VGE= 0V, ƒ= 1MHz, Tj= 25°C
Dynamic Gate Charge (typ.)
Vcc=600V, Ic=300A, Tj= 25°C
100
Cies
10
VCE
VGE
Cres
1
Coes
0.1
0
5
10
15
20
25
30
0
500 1000 1500 2000 2500 3000
Gate charge: Qg [nC]
Collector-Emitter voltage: VCE [V]
2
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