2MBI300VD-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.8Ω, Tj=125°C
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.8Ω, Tj=150°C
10000
10000
1000
100
10
1000
100
10
toff
ton
toff
ton
tr
tf
tr
tf
0
200
400
600
800
0
200
400
600
800
Collector current: Ic [A]
Collector current: Ic [A]
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=300A, VGE=±15V, Tj=125°C
Vcc=600V, VGE=±15V, RG=1.8Ω, Tj=125, 150°C
10000
60
Tj=125oC
Tj=150oC
Eoff
toff
ton
Eon
1000
100
10
40
tr
Err
20
tf
0
1
10
Gate resistance: RG [Ω]
100
0
200
400
600
800
Collector current: Ic [A]
Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area (max.)
Vcc=600V, Ic=300A, VGE=±15V, Tj=125, 150°C
+VGE=15V, -VGE=15V, RG=1.8Ω, Tj=150°C
120
800
600
400
200
0
Tj=125oC
Tj=150oC
100
Eon
80
60
Eoff
40
20
Err
0
1
10
100
0
200 400 600 800 1000 1200 1400
Gate resistance: RG [Ω]
Collector-Emitter voltage: VCE [V]
3
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