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GS8160E36BT-200 参数 Datasheet PDF下载

GS8160E36BT-200图片预览
型号: GS8160E36BT-200
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×18 , 512K ×32 , 512K ×36 18MB同步突发静态存储器 [1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 23 页 / 978 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS8160E18/32/36BT-250/200/150
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
V
DD
V
DDQ
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
T
BIAS
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Voltage on I/O Pins
Voltage on Other Input Pins
Input Current on Any Pin
Output Current on Any I/O Pin
Package Power Dissipation
Storage Temperature
Temperature Under Bias
Value
–0.5
to 4.6
–0.5
to 4.6
–0.5
to V
DDQ
+0.5
–0.5
to V
DD
+0.5
+/–20
+/–20
1.5
–55
to 125
–55
to 125
Unit
V
V
V
V
mA
mA
W
o
o
C
C
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of
this component.
Power Supply Voltage Ranges
Parameter
3.3 V Supply Voltage
2.5 V Supply Voltage
3.3 V V
DDQ
I/O Supply Voltage
2.5 V V
DDQ
I/O Supply Voltage
Symbol
V
DD3
V
DD2
V
DDQ3
V
DDQ2
Min.
3.0
2.3
3.0
2.3
Typ.
3.3
2.5
3.3
2.5
Max.
3.6
2.7
3.6
2.7
Unit
V
V
V
V
Notes
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be
–2
V > Vi < V
DDn
+1.5 V maximum, with a pulse width not to exceed 50% tKC.
Rev: 1.03 9/2005
11/23
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.