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GS8160E36BT-200 参数 Datasheet PDF下载

GS8160E36BT-200图片预览
型号: GS8160E36BT-200
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×18 , 512K ×32 , 512K ×36 18MB同步突发静态存储器 [1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 23 页 / 978 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS8160E18/32/36BT-250/200/150
V
DDQ3
Range Logic Levels
Parameter
V
DD
Input High Voltage
V
DD
Input Low Voltage
V
DDQ
I/O Input High Voltage
V
DDQ
I/O Input Low Voltage
Symbol
V
IH
V
IL
V
IHQ
V
ILQ
Min.
2.0
–0.3
2.0
–0.3
Typ.
Max.
V
DD
+ 0.3
0.8
V
DDQ
+ 0.3
0.8
Unit
V
V
V
V
Notes
1
1
1,3
1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be
–2
V > Vi < V
DDn
+1.5 V maximum, with a pulse width not to exceed 50% tKC.
3. V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
V
DDQ2
Range Logic Levels
Parameter
V
DD
Input High Voltage
V
DD
Input Low Voltage
V
DDQ
I/O Input High Voltage
V
DDQ
I/O Input Low Voltage
Symbol
V
IH
V
IL
V
IHQ
V
ILQ
Min.
0.6*V
DD
–0.3
0.6*V
DD
–0.3
Typ.
Max.
V
DD
+ 0.3
0.3*V
DD
V
DDQ
+ 0.3
0.3*V
DD
Unit
V
V
V
V
Notes
1
1
1,3
1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be
–2
V > Vi < V
DDn
+1.5 V maximum, with a pulse width not to exceed 50% tKC.
3. V
IHQ
(max) is voltage on V
DDQ
pins plus 0.3 V.
Recommended Operating Temperatures
Parameter
Ambient Temperature (Commercial Range Versions)
Ambient Temperature (Industrial Range Versions)
Symbol
T
A
T
A
Min.
0
–40
Typ.
25
25
Max.
70
85
Unit
°C
°C
Notes
2
2
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be
–2
V > Vi < V
DDn
+1.5 V maximum, with a pulse width not to exceed 50% tKC.
Rev: 1.03 9/2005
12/23
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.