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GS8160E36BT-200 参数 Datasheet PDF下载

GS8160E36BT-200图片预览
型号: GS8160E36BT-200
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×18 , 512K ×32 , 512K ×36 18MB同步突发静态存储器 [1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 23 页 / 978 K
品牌: GSI [ GSI TECHNOLOGY ]
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GS8160E18/32/36BT-250/200/150
Simplified State Diagram
X
Deselect
W
W
Simple Synchronous Operation
R
R
X
CW
First Write
R
CR
First Read
X
CR
Simple Burst Synchronous Operation
W
R
X
Burst Write
CR
CW
R
Burst Read
X
CR
Notes:
1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.
2. The upper portion of the diagram assumes active use of only the Enable (E1, E2, and E3) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW)
control inputs, and that ADSP is tied high and ADSC is tied low.
3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
Rev: 1.03 9/2005
9/23
© 2004, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.