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GS816036T-133I 参数 Datasheet PDF下载

GS816036T-133I图片预览
型号: GS816036T-133I
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×18 , 512K ×32 , 512K ×36 18MB同步突发静态存储器 [1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs]
分类和应用: 存储静态存储器
文件页数/大小: 28 页 / 811 K
品牌: GSI [ GSI TECHNOLOGY ]
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Preliminary
GS816018/32/36T-250/225/200/166/150/133
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
V
DD
V
DDQ
V
CK
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
T
BIAS
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Voltage on Clock Input Pin
Voltage on I/O Pins
Voltage on Other Input Pins
Input Current on Any Pin
Output Current on Any I/O Pin
Package Power Dissipation
Storage Temperature
Temperature Under Bias
Value
–0.5
to 4.6
–0.5
to 4.6
–0.5
to 6
–0.5
to V
DDQ
+0.5 (≤ 4.6 V max.)
–0.5
to V
DD
+0.5 (≤ 4.6 V max.)
+/–20
+/–20
1.5
–55
to 125
–55
to 125
Unit
V
V
V
V
V
mA
mA
W
o
o
C
C
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Condi-
tions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component.
Rev: 2.12 3/2002
12/28
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.