HANBit
HMN1M8D
DC ELECTRICAL CHARACTERISTICS (TA= TOPR, VCCmin ≤ VCC≤ VCCmax
)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP.
MAX
UNIT
± 2
Input Leakage Current
VIN=VSS to VCC
/CE=VIH or /OE=VIH
or /WE=VIL
ILI
-
-
µA
± 2
Output Leakage Current
ILO
-
-
µA
Output high voltage
Output low voltage
IOH=-1.0mA
VOH
VOL
ISB
2.4
-
-
-
0.4
6
V
V
IOL= 2.1mA
-
-
㎃
Standby supply current
/CE=VIH
5
/CE≥ VCC-0.2V,
0V≤ VIN≤ 0.2V,
or VIN≥ VCC-0.2V
Standby supply current
Operating supply current
ISB1
-
-
2.5
75
200
180
µA
Min.cycle,duty=100%,
/CE=VIL, II/O=0㎃ ,
㎃
ICC
A19<VIL or A19>VIH
Power-fail-detect voltage
Supply switch-over voltage
VPFD
VSO
4.30
-
4.37
3
4.50
-
V
V
CAPACITANCE (TA=25℃ , f=1MHz, VCC=5.0V)
DESCRIPTION
CONDITIONS
SYMBOL
MAX
MIN
UNIT
Input Capacitance
Input voltage = 0V
Output voltage = 0V
CIN
20
20
-
-
pF
pF
Input/Output Capacitance
CI/O
CHARACTERISTICS (Test Conditions)
PARAMETER
VALUE
+5V
+5V
Input pulse levels
Input rise and fall times
Input and output timing
reference levels
0 to 3V
1.9KΩ
5 ns
1.5V
DOUT
1.9KΩ
DOUT
100㎊
5㎊
( unless otherwise specified)
1KΩ
1KΩ
Output load
See Figures 1and 2
(including scope and jig)
Figure 1.
Figure 2.
Output Load B
Output Load A
URL : www.hbe.co.kr
Rev. 0.0 (April, 2002)
4
HANBit Electronics Co.,Ltd
HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
