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HMN1M8D-150I 参数 Datasheet PDF下载

HMN1M8D-150I图片预览
型号: HMN1M8D-150I
PDF下载: 下载PDF文件 查看货源
内容描述: 非易失性SRAM模块8Mbit的( 1,024KX 8位) , 36PIN DIP, 5V [Non-Volatile SRAM MODULE 8Mbit (1,024K X 8-Bit), 36Pin-DIP, 5V]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 9 页 / 167 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit  
HMN1M8D  
- WRITE CYCLE NO.2 (/CE-Controlled)*1,2,3,4,5  
Address  
tAW  
tWR2  
tAS  
tCW  
/CE  
tWP  
/WE  
tDH2  
tDW  
Data-in  
DIN  
tWZ  
DOUT  
High-Z  
Data  
Undefined  
NOTE: 1. /CE or /WE must be high during address transition.  
2. Because I/O may be active (/OE low) during this period, data input signals of opposite  
polarity to the outputs must not be applied.  
3. If /OE is high, the I/O pins remain in a state of high impedance.  
4. Either tWR1 or tWR2 must be met.  
5. Either tDH1 or tDH2 must be met.  
POWER-DOWN/POWER-UP TIMING  
VCC  
4.75  
VPFD  
VPFD  
4.25  
VSO  
VSO  
tFS  
tPU  
tCER  
tDR  
tWPT  
/CE  
URL : www.hbe.co.kr  
Rev. 0.0 (April, 2002)  
8
HANBit Electronics Co.,Ltd