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HSD8M32B4 参数 Datasheet PDF下载

HSD8M32B4图片预览
型号: HSD8M32B4
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模块32Mbyte ( 8M ×32位)的基础上4Mx16 , 4Banks , 4K参考144pin SO -DIMM 。 , 3.3V [Synchronous DRAM Module 32Mbyte ( 8M x 32-Bit ) 144pin SO-DIMM based on 4Mx16, 4Banks, 4K Ref., 3.3V]
分类和应用: 动态存储器
文件页数/大小: 11 页 / 108 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
-A
PARAMETER
CLK cycle time
CAS
7.5
latency=3
t
CC
CAS
-
latency=2
CLK to valid
output delay
CAS
5.4
latency=3
t
SAC
CAS
-
latency=2
Output data
hold time
CAS
2.7
latency=3
t
OH
CAS
-
latency=2
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
CAS
5.4
latency=3
t
SHZ
CAS
-
latency=2
-
6
6
6
t
CH
t
CL
t
SS
t
SH
t
SLZ
2.5
2.5
1.5
0.8
1
3
3
2
1
1
3
3
2
1
1
3
3
2
1
1
-
3
3
3
3
3
-
6
6
6
-
10
12
1000
1000
1000
8
10
10
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
MIN
-8
-H
HSD8M32B4
-L
UNIT
MAX
NOTE
1000
ns
1
6
ns
7
1,2
ns
2
ns
ns
ns
ns
ns
6
ns
3
3
3
3
3
2
7
ns
Notes :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered, ie., [(tr + tf)/2-1]ns should be added to
the parameter.
URL:www.hbe.co.kr
REV.1.0 (August.2002).
- 8
-
HANBit Electronics Co.,Ltd