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HSD8M32B4 参数 Datasheet PDF下载

HSD8M32B4图片预览
型号: HSD8M32B4
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模块32Mbyte ( 8M ×32位)的基础上4Mx16 , 4Banks , 4K参考144pin SO -DIMM 。 , 3.3V [Synchronous DRAM Module 32Mbyte ( 8M x 32-Bit ) 144pin SO-DIMM based on 4Mx16, 4Banks, 4K Ref., 3.3V]
分类和应用: 动态存储器
文件页数/大小: 11 页 / 108 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit
PIN FUNCTION DESCRIPTION
Pin
CLK
/CE
Name
System clock
Chip enable
Input Function
Active on the positive going edge to sample all inputs.
HSD8M32B4
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
CKE
Clock enable
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
CKE should be enabled 1CLK+tSS prior to valid command.
A0 ~ A11
Address
Row/column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA11, Column address : CA0 ~ CA8
BA0 ~ BA1
Bank select address
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
/RAS
Row address strobe
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
/CAS
Column
strobe
address
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
/WE
Write enable
DQM0 ~ 3
Data
mask
input/output
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when DQM active. (Byte masking)
Data inputs/outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
DQ0 ~ 31
VDD/VSS
Data input/output
Power
supply/ground
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage on Any Pin Relative to Vss
Voltage on Vcc Supply Relative to Vss
Power Dissipation
Storage Temperature
SYMBOL
V
IN ,OUT
Vcc
P
D
T
STG
RATING
-1V to 4.6V
-1V to 4.6V
4W
-55oC to 150oC
Short Circuit Output Current
I
OS
50mA
Notes :
Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
URL:www.hbe.co.kr
REV.1.0 (August.2002).
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HANBit Electronics Co.,Ltd