Specifications RFP30N06LE, RF1S30N06LE, RF1S30N06LESM
Electrical Specifications
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
T
C
= +25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
DS
= 60V,
V
GS
= 0V
V
GS
= +10, -8V
I
D
= 30A, V
GS
= 5V
V
DD
= 30V, I
D
= 30A,
R
L
= 1Ω, V
GS
= 5V,
R
GS
= 2.5Ω
T
C
= +25
o
C
T
C
= +150
o
C
MIN
60
1
-
-
-
-
-
-
-
-
-
-
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
V
DD
= 48V,
I
D
= 30A,
R
L
= 1.6Ω
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
11
88
30
40
-
51
28
1.8
1350
290
85
-
-
MAX
-
2
1
50
10
0.047
140
-
-
-
-
100
62
34
2.6
-
-
-
1.55
80
UNITS
V
V
µA
µA
µA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
o
Gate-Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
I
GSS
r
DS(ON)
t
ON
t
D(ON)
t
R
t
D(OFF)
t
F
t
OFF
Q
G(TOT)
Q
G(5)
Q
G(TH)
C
ISS
C
OSS
C
RSS
R
θJC
R
θJA
C/W
Source-Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
RR
TEST CONDITIONS
I
SD
= 30A
I
SD
= 30A, dI
SD
/dt = 100A/µs
MIN
-
-
TYP
-
-
MAX
1.5
125
UNITS
V
ns
5-46
HARRIS [ HARRIS CORPORATION ]
