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RFP30N06LE 参数 Datasheet PDF下载

RFP30N06LE图片预览
型号: RFP30N06LE
PDF下载: 下载PDF文件 查看货源
内容描述: 30A , 60V , ESD额定额定雪崩,逻辑电平N沟道增强型功率MOSFET [30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs]
分类和应用:
文件页数/大小: 6 页 / 95 K
品牌: HARRIS [ HARRIS CORPORATION ]
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RFP30N06LE, RF1S30N06LE, RF1S30N06LESM
Typical Performance Curves
T
C
= +25
o
C
10
DUTY CYCLE
0.5
0.2
0.1
0.05
0.02
0.01
200
100
I
D
, DRAIN CURRENT (A)
Z
θ
JC
, NORMALIZED
THERMAL RESPONSE
1
100
µ
s
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1ms
10ms
100ms
DC
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
10
-2
10
-1
10
0
10
1
1
V
DSS
MAX = 60V
1
10
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
100
SINGLE PULSE
0.01
10
-5
10
-4
10
-3
t, RECTANGULAR PULSE DURATION (s)
FIGURE 1. SAFE OPERATING AREA CURVE
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
40
I
DM
, PEAK CURRENT CAPABILITY (A)
500
T
C
= +25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
175
T
c
I = I
----------------------
-
25
150
I
D
, DRAIN CURRENT (A)
30
V
GS
= 10V
100
20
10
V
GS
= 5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
20
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t, PULSE WIDTH (s)
10
0
10
1
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. PEAK CURRENT CAPABILITY
100
I
D(ON)
, ON STATE DRAIN CURRENT (A)
PULSE DURATION = 250µs, T
C
= +25
o
C
V
GS
= 10V
V
DD
= 15V
100
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
-55
o
C
+25
o
C
+175
o
C
I
D
, DRAIN CURRENT (A)
80
V
GS
= 5V
V
GS
= 4.5V
80
60
V
GS
= 4V
40
V
GS
= 3V
20
60
40
20
0
0
1.5
4.5
3.0
6.0
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
7.5
0
0.0
1.5
6.0
3.0
4.5
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
7.5
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
5-47