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RFP30N06LE 参数 Datasheet PDF下载

RFP30N06LE图片预览
型号: RFP30N06LE
PDF下载: 下载PDF文件 查看货源
内容描述: 30A , 60V , ESD额定额定雪崩,逻辑电平N沟道增强型功率MOSFET [30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs]
分类和应用:
文件页数/大小: 6 页 / 95 K
品牌: HARRIS [ HARRIS CORPORATION ]
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RFP30N06LE, RF1S30N06LE, RF1S30N06LESM
Typical Performance Curves
3.0
2.5
r
DS(ON)
, NORMALIZED
2.0
1.5
1.0
0.5
0.0
-80
V
GS(TH)
, NORMALIZED GATE
THRESHOLD VOLTAGE
(Continued)
V
GS
= V
DS
, I
D
= 250µA
2.0
PULSE DURATION = 250µs, V
GS
= 5V, I
D
= 30A
1.5
1.0
0.5
-40
0
40
80
120
160
200
0.0
-80
-40
T
J
, JUNCTION TEMPERATURE (
o
C)
160
120
0
40
80
T
J
, JUNCTION TEMPERATURE (
o
C)
200
FIGURE 7. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0.0
0
25
BV
DSS
, NORMALIZED
DRAIN-TO-SOURCE BREAKDOWN VOLTAGE
I
D
= 250µA
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
(
o
C)
160
200
T
J
, JUNCTION TEMPERATURE
125
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
150
175
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
FIGURE 10. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING CURVE
V
DS
, DRAIN SOURCE VOLTAGE (V)
V
DD
= BV
DSS
45
V
DD
= BV
DSS
3.75
C, CAPACITANCE (pF)
1500
C
ISS
30
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
2.50
1000
500
C
OSS
C
RSS
15
R
L
= 2.0
I
G(REF)
= 0.62mA
V
GS
= 5V
I
G(REF)
I
G(ACT)
t, TIME (s)
I
G(REF)
I
G(ACT)
1.25
0
0
0
10
15
20
5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
25
20
80
0.00
FIGURE 11. TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE
VOLTAGE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO HARRIS
APPLICATION NOTES AN7254 AND AN7260
5-48
V
GS
, GATE SOURCE VOLTAGE (V)
2000
V
GS
= 0V, f = 1MHz
60
5.00