2SK3080
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
Pch
Note2
Tch
Tstg
Ratings
30
±20
30
120
30
50
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
Body-drain diode reverse drain current I
DR
Channel dissipation
Channel temperature
Storage temperature
Note:
1. PW
≤
10µs, duty cycle
≤
1 %
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
30
±20
—
—
1.0
—
—
12
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
20
35
18
750
520
210
16
260
85
90
1.0
45
Max
—
—
10
±10
2.0
28
50
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 30A, V
GS
= 0
I
F
= 30A, V
GS
= 0
diF/ dt =50A/µs
Test Conditions
I
D
= 10mA, V
GS
= 0
I
G
=
±100µA,
V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
GS
=
±16V,
V
DS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 15A, V
GS
= 10V
Note3
I
D
= 15A, V
GS
= 4V
Note3
I
D
= 15A, V
DS
= 10V
Note3
V
DS
= 10V
V
GS
= 0
f = 1MHz
V
GS
= 10V, I
D
= 15A
R
L
= 0.67Ω
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Zero gate voltege drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
I
DSS
I
GSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Body–drain diode forward voltage V
DF
Body–drain diode reverse
recovery time
Note:
3. Pulse test
t
rr
2
HITACHI [ HITACHI SEMICONDUCTOR ]
