2SK3080
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
Pulse Test
Drain to Source On State Resistance
R
DS(on)
(m
Ω
)
1.0
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
100
50
V
GS
= 4 V
0.8
0.6
I
D
= 20 A
10 A
5A
0
12
4
8
Gate to Source Voltage
16
20
V
GS
(V)
0.4
20
10
5
1
2
0.2
10 V
10 20
50
5
Drain Current I
D
(A)
100
Static Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
80
I
D
= 20 A
V
GS
= 4 V
5, 10 A
Forward Transfer Admittance vs.
Drain Current
100
30
10
75 °C
3
1
0.3
0.1
0.1
Tc = –25 °C
25 °C
60
40
20
10 V
0
–40
5, 10, 20 A
V
DS
= 10 V
Pulse Test
0.3
1
3
10
30
Drain Current I
D
(A)
100
0
40
80
120
160
Case Temperature Tc (°C)
4
HITACHI [ HITACHI SEMICONDUCTOR ]
