2SK3080
Body–Drain Diode Reverse
Recovery Time
1000
10000
5000
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Reverse Recovery Time trr (ns)
100
30
10
3
1
0.1
Capacitance C (pF)
300
2000
1000
Ciss
500
Coss
200
100
di / dt = 50 A / µs
V
GS
= 0, Ta = 25 °C
0.3
1
3
10
30
100
Reverse Drain Current I
DR
(A)
Crss
0
10
20
30
40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Switching Characteristics
V
DS
(V)
I
D
= 30 A
V
DD
= 5 V
10 V
25 V
V
GS
V
GS
(V)
50
20
1000
300
100
30
10
3
1
0.1
tr
t d(on)
tf
t d(off)
Drain to Source Voltage
30
V
DS
12
20
8
10
V
DD
= 25 V
10 V
5V
8
16
24
32
Gate Charge Qg (nc)
4
0
40
Gate to Source Voltage
Switching Time t (ns)
40
16
V
GS
= 10 V, V
DD
= 10 V
PW = 5 µs, duty < 1 %
0.3
1
3
Drain Current
10
30
I
D
(A)
100
0
5
HITACHI [ HITACHI SEMICONDUCTOR ]
