2SK3157
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
1000
Pulse Test
500
200
100
V
GS
= 4 V
50
20
10
1
2
10
5
Drain Current
50
20
I
D
(A)
100
10 V
Drain to Source Saturation Voltage
V
DS(on)
(V)
Pulse Test
1.6
1.2
I
D
= 20 A
0.8
10 A
0.4
5A
0
12
4
8
Gate to Source Voltage
16
20
V
GS
(V)
Drain to Source On State Resistance
R
DS(on)
(m
Ω
)
2.0
Static Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
Forward Transfer Admittance |y
fs
| (S)
Static Drain to Source on State Resistance
vs. Temperature
250
Pulse Test
200
Forward Transfer Admittance vs.
Drain Current
100
30
10
75 °C
3
1
0.3
0.1
0.1 0.2
0.5 1
2
5
Tc = –25 °C
150
I
D
= 20 A
100
V
GS
= 4 V
50
10 V
0
–40
5, 10 A
25 °C
5, 10 A
20 A
V
DS
= 10 V
Pulse Test
10 20
50 100
0
40
80
120
160
Case Temperature Tc (°C)
Drain Current I
D
(A)
4
HITACHI [ HITACHI SEMICONDUCTOR ]
