2SK3566
I
D
– V
DS
2
COMMON
SOURCE
Tc
=
25°C
PULSE TEST
8
6
3
5.5
5.25
COMMON
SOURCE
Tc
=
25°C
PULSE TEST
I
D
– V
DS
10
6
8
5.5
DRAIN CURRENT I
D
(A)
1.6
DRAIN CURRENT I
D
(A)
10
2.5
2
5.25
1.5
5
1
4.75
0.5
4. 5
VGS
=
4 V
1.2
5
0.8
4.75
4. 5
VGS
=
4 V
0.4
0
0
4
8
12
16
20
24
0
0
12
24
36
DRAIN-SOURCE VOLTAGE
V
DS
(V)
DRAIN-SOURCE VOLTAGE
V
DS
(V)
I
D
– V
GS
V
DS
– V
GS
V
DS
(V)
5
COMMON SOURCE
40
COMMON SOURCE
Tc
=
25℃
30
PULSE TEST
DRAIN CURRENT I
D
(A)
4
VDS
=
20 V
PULSE TEST
3
DRAIN-SOURCE VOLTAGE
20
ID
=
2.5 A
2
Tc
= −55°C
25
1
100
10
1.5
0.8
0
0
4
8
12
16
20
0
0
2
4
6
8
10
12
GATE-SOURCE VOLTAGE
V
GS
(V)
GATE-SOURCE VOLTAGE
V
GS
(V)
⎪
Y
fs
⎪
– I
D
FORWARD TRANSFER ADMITTANCE
⎪Y
fs
⎪
(S)
10
100
R
DS (ON)
– I
D
DRAIN-SOURCE ON RESISTANCE
R
DS (ON)
(Ω)
COMMON SOURCE
Tc
=
25°C
PULSE TEST
1
Tc
= −55°C
25
100
1
10
VGS
=
10 V
0.1
COMMON SOURCE
VDS
=
20 V
0.01
0.01
PULSE TEST
0.1
1
10
1
0.01
0.1
1
10
DRAIN CURRENT I
D
(A)
DRAIN CURRENT I
D
(A)
3
2005-01-24
HITACHI [ HITACHI SEMICONDUCTOR ]
