2SK3566
r
th
– t
w
NORMALIZED TRANSIENT THERMAL
IMPEDANCE r
th (t)
/R
th (ch-c)
10
1
Duty=0.5
0.2
0.1
0.1
0.05
0.02
SINGLE PULSE
0.01
PDM
t
T
Duty
=
t/Tt/T
Duty
=
Rth th (ch-c) 3.125°C/W
R (ch-c)
= =
1.25°C/W
0.01
0.001
10μ
100μ
1�½�
10�½�
100�½�
1
10
PULSE WIDTH
t
w
(s)
SAFE OPERATING AREA
100
250
E
AS
– T
ch
DRAIN CURRENT I
D
(A)
10
ID max (PULSED)
*
ID max (CONTINUOUS)
*
1 ms
*
DC OPERATION
Tc
=
25°C
100
µs
*
AVALANCHE ENERGY
E
AS
(mJ)
200
150
1
100
0.1
※
SINGLE NONREPETITIVE PULSE
Tc=25℃
50
CURVES MUST BE DERATED LINEARLY WITH
INCREASE IN TEMPERATURE.
0.01
1
VDSS max
100
1000
10000
0
25
50
75
100
125
150
10
DRAIN-SOURCE VOLTAGE
V
DS
(V)
CHANNEL TEMPERATURE (INITIAL)
T
ch
(°C)
B
VDSS
I
AR
V
DD
TEST CIRCUIT
R
G
=
25
Ω
V
DD
=
90 V, L
=
43.4mH
V
DS
15 V
−
15 V
WAVE FORM
Ε
AS
=
⎛
⎞
1
B VDSS
⎟
⋅
L
⋅
I2
⋅ ⎜
⎜
B
2
−
VDD
⎟
⎝
VDSS
⎠
5
2005-01-24
HITACHI [ HITACHI SEMICONDUCTOR ]
