2SK973 L , 2SK973 S
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
Min
60
Typ
—
Max
—
Unit
V
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
= ±100 µA, V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= 50 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 1 A, V
GS
= 10 V *
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±20
—
—
V
———————————————————————————————————————————
—
—
1.0
—
—
—
—
0.25
0.40
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
* Pulse Test
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
1.2
—
—
—
—
—
—
—
—
2.0
240
115
35
4
15
80
40
1.0
±10
100
2.0
0.35
0.50
—
—
—
—
—
—
—
—
—
S
pF
pF
pF
ns
ns
ns
ns
V
I
F
= 2 A, V
GS
= 0
I
F
= 2 A, V
GS
= 0,
di
F
/dt = 50 A/µs
I
D
= 1 A, V
GS
= 10 V,
R
L
= 30
Ω
µA
µA
V
Ω
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———————
——————————–
I
D
= 1 A, V
GS
= 4 V *
I
D
= 1 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
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—
70
—
ns
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HITACHI [ HITACHI SEMICONDUCTOR ]
