2SK973 L , 2SK973 S
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
2.0
Drain to Source Saturation Voltage
V
DS (on)
(V)
1.6
5A
1.2
Pulse Test
5
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
2
1.0
0.5
10 V
0.2
0.1
0.05
0.2
V
GS
= 4 V
0.8
2A
0.4
I
D
= 1 A
0
6
2
4
8
10
Gate to Source Voltage V
GS
(V)
0.5 1.0
5
2
10
Drain Current I
D
(A)
20
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Pulse Test
Forward Transfer Admittance
yfs
(S)
1.0
10
5
Forward Transfer Admittance
vs. Drain Current
V
DS
= 10 V
–25°C
Pulse Test
T
C
= 25°C
0.8
I
D
= 2 A
0.6
V
GS
= 4 V
0.4
5A
0.2
V
GS
= 10 V
1 A, 2 A
1A
2
1.0
0.5
75°C
0.2
0.1
0.05
0
–40
0
40
120
80
Case Temperature T
C
(°C)
160
0.1
0.2
2
0.5 1.0
Drain Current I
D
(A)
5
HITACHI [ HITACHI SEMICONDUCTOR ]
