HM514170C, HM51S4170C Series
Read-Modify-Write Cycle
HM514170C, HM51S4170C
-7
Parameter
Read-modify-write cycle time
RAS
to
WE
delay time
CAS
to
WE
delay time
Column address to
WE
delay time
OE
hold time from
WE
Symbol Min
t
RWC
t
RWD
t
CWD
t
AWD
t
OEH
180
95
45
60
20
Max
—
—
—
—
—
-8
Min
200
105
45
65
20
Max
—
—
—
—
—
Unit
ns
ns
ns
ns
ns
10, 19
10, 19
10, 19
21
Notes
Refresh Cycle
HM514170C, HM51S4170C
-7
Parameter
CAS
setup time (CBR refresh cycle)
CAS
hold time (CBR refresh cycle)
RAS
precharge to
CAS
hold time
CAS
precharge time in normal mode
Symbol Min
t
CSR
t
CHR
t
RPC
t
CPN
10
10
10
10
Max
—
—
—
—
-8
Min
10
10
10
10
Max
—
—
—
—
Unit
ns
ns
ns
ns
Notes
19
20
19
Fast Page Mode Cycle
HM514170C, HM51S4170C
-7
Parameter
Fast page mode cycle time
Fast page mode
CAS
precharge time
Fast page mode
RAS
pulse width
Access time from
CAS
precharge
RAS
hold time from
CAS
precharge
Fast page mode read-modify-write cycle
CAS
precharge to
UWE, LWE
delay time
Fast page mode read-modify-write cycle time
Symbol Min
t
PC
t
CP
t
RASC
t
ACP
t
RHCP
t
CPW
t
PCM
45
10
—
—
40
65
95
Max
—
—
-8
Min
50
10
Max
—
—
Unit
ns
ns
12
3, 13
Notes
100000
—
40
—
—
—
—
45
70
100
100000 ns
45
—
—
—
ns
ns
ns
ns
21
10
HITACHI [ HITACHI SEMICONDUCTOR ]
