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GM71CS18163CLJ-7 参数 Datasheet PDF下载

GM71CS18163CLJ-7图片预览
型号: GM71CS18163CLJ-7
PDF下载: 下载PDF文件 查看货源
内容描述: X16 EDO页模式DRAM\n [x16 EDO Page Mode DRAM ]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 11 页 / 114 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
 浏览型号GM71CS18163CLJ-7的Datasheet PDF文件第1页浏览型号GM71CS18163CLJ-7的Datasheet PDF文件第2页浏览型号GM71CS18163CLJ-7的Datasheet PDF文件第4页浏览型号GM71CS18163CLJ-7的Datasheet PDF文件第5页浏览型号GM71CS18163CLJ-7的Datasheet PDF文件第6页浏览型号GM71CS18163CLJ-7的Datasheet PDF文件第7页浏览型号GM71CS18163CLJ-7的Datasheet PDF文件第8页浏览型号GM71CS18163CLJ-7的Datasheet PDF文件第9页  
GM71C18163C  
GM71CS18163CL  
Recommended DC Operating Conditions (TA = 0 ~ +70C)  
Symbol  
VCC  
Parameter  
Min  
4.5  
Typ  
Max  
5.5  
Unit  
V
Supply Voltage  
5.0  
VIH  
Input High Voltage  
Input Low Voltage  
2.4  
-
-
6.0  
V
VIL  
-1.0  
0.8  
V
Note: All voltage referred to Vss.  
The supply voltage with all VCC pins must be on the same level. The supply voltage with all VSS pins must be  
on the same level.  
Truth Table  
Output  
Open  
Operation  
RAS  
H
LCAS UCAS  
WE  
D
OE  
D
Notes  
D
L
H
L
L
H
L
D
H
L
L
H
L
L
H
L
L
H
1,3  
Standby  
L
H
L
Valid  
Lower byte  
L
1,3  
L
H
Valid  
Read cycle  
Upper byte  
L
Valid  
H
L
L
L
L
L
L
L
Word  
D
L
Open  
Lower byte  
L
Open  
Early write cycle  
D
D
H
H
H
Upper byte  
1,2,3  
1,2,3  
1,3  
L
Open  
Word  
L
Undefined  
Undefined  
L
Lower byte  
Upper byte  
Delayed Write  
cycle  
H
L
L
L
Undefined  
Valid  
Word  
Lower byte  
L
L
L
H to L L to H  
H to L L to H  
H to L L to H  
Read-modify  
-write cycle  
H
L
L
Upper byte  
Valid  
L
H
L
L
L
Valid  
Open  
Word  
Word  
D
D
D
D
D
D
H to L  
H to L  
H to L  
L
CBR Refresh  
or  
Self Refresh  
(L-series)  
H
Open  
Open  
Word  
Word  
1,3  
L
RAS-only  
Refresh cycle  
Open  
Open  
Word  
H
L
H
D
H
D
H
L
L
1,3  
1,3  
Read cycle  
(Output disabled)  
L
Notes: 1. H: High (inactive) L: Low(active) D: H or L  
2. tWCS >= 0ns Early write cycle  
tWCS <= 0ns Delayed write cycle  
3. Mode is determined by the OR function of the UCAS and LCAS. (Mode is set by earliest of  
UCAS and LCAS active edge and reset by the latest of UCAS and LCAS inactive edge.) However  
write OPERATION and output High-Z control are done independently by each UCAS,LCAS.  
ex) if RAS = H to L, UCAS = H, LCAS = L, then CAS-before-RAS refresh cycle is selected.  
Rev 0.1 / Apr’01