GM71C18163C
GM71CS18163CL
DC Electrical Characteristics (VCC = 5V+/-10%, Vss = 0V, TA = 0 ~ 70C)
Symbol
Parameter
Min Max Unit Note
V
OH
Output Level
Output "H" Level Voltage (IOUT = -2mA)
2.4
0
V
CC
V
V
Output Level
Output "L" Level Voltage (IOUT = 2mA)
V
OL
0.4
Operating Current
Average Power Supply Operating Current
(RAS, UCAS or LCAS Cycling: tRC = tRC min)
I
CC1
50ns
60ns
70ns
-
-
190
170
mA
mA
mA
1, 2
-
150
I
I
CC2
CC3
Standby Current (TTL)
Power Supply Standby Current
(RAS, UCAS, LCAS = VIH, DOUT = High-Z)
-
2
50ns
-
-
190
170
150
185
RAS Only Refresh Current
Average Power Supply Current
RAS Only Refresh Mode
(tRC = tRC min)
60ns
70ns
50ns
2
-
-
I
CC4
-
EDO Page Mode Current
Average Power Supply Current
EDO Page Mode
mA
1, 3
-
-
60ns
70ns
165
145
(tHPC = tHPC min)
-
-
Standby Current (CMOS)
Power Supply Standby Current
(RAS, UCAS or LCAS >=VCC - 0.2V, DOUT = High-Z)
I
I
CC5
CC6
1
mA
uA
150
5
50ns
60ns
70ns
-
-
190
170
CAS-before-RAS Refresh Current
(tRC = tRC min)
mA
150
500
-
-
Battery Back Up Operating Current(Standby with CBR Ref.)
(CBR refresh, tRC=125us, tRAS<=0.3us,
I
I
CC7
CC8
uA
4,5
1
D
OUT=High-Z, CMOS interface)
Standby Current RAS = VIH
UCAS, LCAS = VIL
-
mA
5
D
OUT = Enable
Self-Refresh Mode Current
(RAS, UCAS or LCAS <=0.2V, DOUT=High-Z, CMOS interface)
I
CC9
-
300
10
uA
uA
uA
5
I
L(I)
Input Leakage Current
Any Input (0V<=VIN<= 6V)
-10
-10
Output Leakage Current
(DOUT is Disabled, 0V<=VOUT<= 6V)
I
L(O)
10
Note: 1. ICC depends on output load condition when the device is selected.
CC(max) is specified at the output open condition.
2. Address can be changed once or less while RAS = VIL
I
.
3. Address can be changed once or less while UCAS and LCAS = VIH
4. CAS = L (<=0.2V) while RAS = L (<=0.2V).
5. L-version.
.
Rev 0.1 / Apr’01
HYNIX [ HYNIX SEMICONDUCTOR ]
