11
512Mbit (16Mx32bit) Mobile SDR Memory
H55S5122DFR Series / H55S5132DFR Series
CAPACITANCE
(T
A
= 25
o
C, f=1MHz)
6/H
Parameter
Pin
CLK
Input capacitance
Data input/output capacitance
A0~A13, BA0, BA1, CKE, CS, RAS,
CAS, WE, DQM0~3
DQ0 ~ DQ31
Symbol
Min
CI1
CI2
CI/O
2
2
2
Max
4.0
4.0
4.5
pF
pF
pF
Unit
DC CHARACTERRISTICS I
(T
A
= -30 to 85
o
C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Note:
1. V
IN
= 0 to 1.8V. All other pins are not tested under V
IN
=0V.
2. D
OUT
is disabled. V
OUT
= 0 to 1.95V.
3. I
OUT
= - 0.1mA
4. I
OUT
= + 0.1mA
Symbol
I
LI
I
LO
V
OH
V
OL
Min
-1
-1
V
DDQ
-0.2
-
Max
1
1
-
0.2
Unit
uA
uA
V
V
Note
1
2
3
4
Rev 1.5 / Jan. 2009
9