11
512Mbit (16Mx32bit) Mobile SDR Memory
H55S5122DFR Series / H55S5132DFR Series
ABSOLUTE MAXIMUM RATING
Parameter
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to V
SS
Voltage on V
DD
relative to V
SS
Voltage on V
DDQ
relative to V
SS
Short Circuit Output Current
Power Dissipation
Soldering Temperature
.
Time
Symbol
T
A
T
STG
V
IN
, V
OUT
V
DD
V
DDQ
I
OS
PD
T
SOLDER
Rating
-30 ~ 85
-55 ~ 125
-1.0 ~ 2.6
-1.0 ~ 2.6
-1.0 ~ 2.6
50
1
260
.
20
Unit
o
C
C
o
V
V
V
mA
W
o
C
.
Sec
DC OPERATING CONDITION
(T
A
= -30 to 85
o
C)
Parameter
Power Supply Voltage
Power Supply Voltage
Input High Voltage
Input Low Voltage
Note:
1. All Voltages are referenced to V
SS
= 0V
2. V
DDQ
must not exceed the level of V
DD
Symbol
V
DD
V
DDQ
V
IH
V
IL
Min
1.7
1.7
0.8*V
DDQ
-0.3
Typ
1.8
1.8
Max
1.95
1.95
V
DDQ+
0.3
0.3
Unit
V
V
V
V
Note
1
1, 2
1, 2
1, 2
-
-
AC OPERATING TEST CONDITION
(T
A
= -30 to 85
o
C,
V
DD =
1.8V, V
SS
= 0V)
Parameter
AC Input High/Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise/Fall Time
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
Symbol
V
IH
/ V
IL
V
trip
t
R
/ t
F
V
outref
CL
Value
0.9*V
DDQ
/0.2
0.5*V
DDQ
1
0.5*V
DDQ
30
Unit
V
V
ns
V
pF
Note
Rev 1.5 / Jan. 2009
8
HYNIX [ HYNIX SEMICONDUCTOR ]
