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HY29F040AT-55 参数 Datasheet PDF下载

HY29F040AT-55图片预览
型号: HY29F040AT-55
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8位CMOS 5.0伏只,扇区擦除闪存 [512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管ISM频段
文件页数/大小: 40 页 / 284 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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protect and sector unprotect features can be en-
abled in a PROM programmer.
The HY29F040A needs a single 5.0 volt power-
supply for read, program and erase operation. In-
ternally generated and well regulated voltages are
provided for program and erase operation. A low
Vcc detector inhibits write operations on loss of
power. End of program or erase is detected by /Data
Polling of DQ7 or by the Toggle Bit feature on DQ6.
Once program or erase cycle is successfully com-
pleted, the device internally resets to the Read
mode.
BLOCK DIAGRAM
DQ 0-DQ7
Vcc
Vss
State
C ontrol
WE
Com mand
R egister
P G M V oltage
G en erato r
Chip E nable
O u tput E nable
Log ic
E rase V oltage
G en erato r
Input/O utpu t
B uffers
CE
OE
STB
Data Latch
STB
Y-D ecoder
V cc D etector
A 0-A18
A ddress
Latch
Y -G ating
Tim e r
Cell M atrix
X-D ecoder
2
HY29F040A