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HY57V283220TP-P 参数 Datasheet PDF下载

HY57V283220TP-P图片预览
型号: HY57V283220TP-P
PDF下载: 下载PDF文件 查看货源
内容描述: 4银行X 1M X 32位同步DRAM [4 Banks x 1M x 32Bit Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 15 页 / 914 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
 浏览型号HY57V283220TP-P的Datasheet PDF文件第7页浏览型号HY57V283220TP-P的Datasheet PDF文件第8页浏览型号HY57V283220TP-P的Datasheet PDF文件第9页浏览型号HY57V283220TP-P的Datasheet PDF文件第10页浏览型号HY57V283220TP-P的Datasheet PDF文件第11页浏览型号HY57V283220TP-P的Datasheet PDF文件第12页浏览型号HY57V283220TP-P的Datasheet PDF文件第14页浏览型号HY57V283220TP-P的Datasheet PDF文件第15页  
HY57V283220(L)T(P) / HY5V22(L)F(P)
COMMAND TRUTH TABLE
Command
Mode Register Set
No Operation
Bank Active
Read
Read with Autoprecharge
Write
Write with Autoprecharge
Precharge All Banks
Precharge selected Bank
Burst Stop
DQM
Auto Refresh
Burst-Read-Single-WRITE
Entry
Self Refresh
1
Exit
CKEn-1
H
H
H
H
CKEn
X
X
X
X
CS
L
H
L
L
L
RAS
L
X
H
L
H
CAS
L
X
H
H
L
WE
L
X
H
H
H
DQM
X
X
X
X
CA
RA
L
H
L
H
H
L
X
X
X
A9 Pin High
(Other Pins OP code)
3
ADDR
A10/
AP
OP code
X
BA
Note
V
V
H
X
L
H
L
L
X
CA
V
X
V
H
H
H
H
H
H
L
X
X
L
L
L
H
X
H
H
L
L
X
X
V
X
H
X
L
H
L
L
L
H
L
H
L
H
L
H
L
L
L
L
X
H
X
H
X
H
X
V
X
L
L
L
X
H
X
H
X
H
X
V
H
L
H
X
H
X
H
X
H
X
V
X
X
X
X
X
Entry
Precharge power
down
Exit
H
L
X
X
X
L
H
Clock
Suspend
Entry
Exit
H
L
L
H
X
X
X
Note :
1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high
2. X = Don¢t care, H = Logic High, L = Logic Low. BA =Bank Address, RA = Row Address, CA = Column Address,
Opcode = Operand Code, NOP = No Operation
3. The burst read sigle write mode is entered by programming the write burst mode bit (A9) in the mode register to a logic 1.
Rev. 0.9 / July 2004
13