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HY57V283220TP-P 参数 Datasheet PDF下载

HY57V283220TP-P图片预览
型号: HY57V283220TP-P
PDF下载: 下载PDF文件 查看货源
内容描述: 4银行X 1M X 32位同步DRAM [4 Banks x 1M x 32Bit Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 15 页 / 914 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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HY57V283220(L)T(P) / HY5V22(L)F(P)
DC CHARACTERISTICS II
(DC operating conditions unless otherwise noted)
Speed
Parameter
Symbol
Test Condition
-5
Burst length=1, One bank active
t
RC
t
RC
(min), I
OL
=0mA
CKE
V
IL
(max), t
CK
= 10ns
CKE
V
IL
(max), t
CK
=
CKE
V
IH
(min), CS
V
IH
(min),
t
CK
= 10ns Input signals are changed one
time during 2clks. All other pins
VDD-
0.2V or
0.2V
-55
-6
-7
-H
-8
-P
S
Unit
Note
Operating Current
IDD1
120
120
110
100
100
100
90
90
mA
1
Precharge Standby Current
in power down mode
IDD2P
IDD2PS
2
mA
1
IDD2N
Precharge Standby Current
in non power down mode
IDD2NS
14
mA
9
CKE
V
IH
(min), t
CK
=
Input signals are stable.
CKE
V
IL
(max), t
CK
= 10ns
CKE
V
IL
(max), t
CK
=
CKE
V
IH
(min), CS
V
IH
(min),
t
CK
= 10ns
Input signals are changed
IDD3P
Active Standby Current
in power down mode
IDD3PS
7
mA
6
IDD3N
Active Standby Current
in non power down mode
IDD3NS
one time during 2clks. All other pins
V
DD
-0.2V or
0.2V
CKE
V
IH
(min), t
CK
=
Input signals are stable.
t
t
CK
t
CK
(min),
I
OL
=0mA
CL=3
CL=2
230
-
170
220
-
160
200
-
150
180
-
140
17
mA
13
Burst Mode Operating
Current
180
-
140
2
150
-
140
130
130
140
130
mA
130
140
mA
2
3
mA
4
1
IDD4
All banks active
IDD5
Auto Refresh Current
t
RC
t
RC
(min), All banks active
Self Refresh Current
IDD6
CKE
0.2V
0.8
Note :
1.I
DD1
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open
2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HY57V283220T(P)(HY5V22F(P))-5/55/6/7/H/8/P/S
4.HY57V283220LT(P)(HY5V22LF(P))-5/55/6/7/H/8/P/S
Rev. 0.9 / July 2004
8