HY57V641620HG-I Series
4 Banks x 1M x 16Bit Synchronous DRAM
HY57V641620HG(L)T-8I
CAS Latency
125MHz(8ns)
100MHz(10ns)
83MHz(12ns)
3CLKs
2CLKs
3CLKs
tRCD
3CLKs
2CLKs
3CLKs
tRAS
7CLKs
5CLKs
6CLKs
tRC
10CLKs
7CLKs
9CLKs
tRP
3CLKs
3CLKs
2CLKs
tAC
6ns
6ns
6ns
tOH
2.0ns
2.0ns
2.0ns
HY57V641620HG(L)T-P
I
CAS Latency
100MHz(10ns)
83MHz(12ns)
66MHz(15ns)
2CLKs
2CLKs
2CLKs
tRCD
2CLKs
2CLKs
2CLKs
tRAS
5CLKs
5CLKs
4CLKs
tRC
7CLKs
7CLKs
6CLKs
tRP
2CLKs
2CLKs
2CLKs
tAC
6ns
6ns
6ns
tOH
2.0ns
2.0ns
2.0ns
HY57V641620HG(L)T-SI
CAS Latency
100MHz(10ns)
83MHz(12ns)
66MHz(15ns)
3CLKs
2CLKs
2CLKs
tRCD
2CLKs
2CLKs
2CLKs
tRAS
5CLKs
5CLKs
4CLKs
tRC
7CLKs
7CLKs
6CLKs
tRP
2CLKs
2CLKs
2CLKs
tAC
6ns
6ns
6ns
tOH
2.0ns
2.0ns
2.0ns
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use
of circuits described. No patent licenses are implied.
Rev. 1.0/Jan. 02
10