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HY57V641620HGT-7I 参数 Datasheet PDF下载

HY57V641620HGT-7I图片预览
型号: HY57V641620HGT-7I
PDF下载: 下载PDF文件 查看货源
内容描述: 4库x 1米x 16Bit的同步DRAM [4 Banks x 1M x 16Bit Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 12 页 / 146 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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HY57V641620HG
AC CHARACTERISTICS II
Parameter
Symbo
l
-5I
Min
55
60
15
Max
-
-
-
-55I
Min
55
60
16.5
Max
-
-
-
-6I
Min Max
60
60
18
42
18
12
1
0
2
5
2
0
2
3
-
-
-
100
K
-
-
-
-
-
-
-
-
-
-
Min
62
62
20
42
20
14
1
0
2
4
2
0
1
3
-7I
Max
-
-
-
120K
-
-
-
-
-
-
-
-
-
-
-KI
Min
65
65
15
45
15
15
1
0
2
4
2
0
1
3
Max
-
-
-
120K
-
-
-
-
-
-
-
-
-
-
-HI
Min
65
65
20
45
20
15
1
0
2
4
2
0
1
3
Max
-
-
-
120K
-
-
-
-
-
-
-
-
-
-
-8I
Min Max
68
68
20
48
20
16
1
0
2
5
2
0
2
3
-
-
-
100
K
-
-
-
-
-
-
-
-
-
-
-PI
Min
70
70
20
50
20
20
1
0
2
3
2
0
1
3
Max
-
-
-
120K
-
-
-
-
-
-
-
-
-
-
-SI
Unit
Min
70
70
20
50
20
20
1
0
2
3
2
0
1
3
Max
-
-
-
120K
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
CLK
CLK
CLK
CLK
CLK
CLK
CLK
CLK
Note
RAS Cycle
Time
Operation
Auto Refresh
t
RC
t
RRC
t
RCD
t
RAS
t
RP
t
RRD
t
CCD
t
WTL
t
DPL
t
DAL
t
DQZ
t
DQM
t
MRD
t
PROZ
3
t
PROZ
2
t
PDE
t
SRE
t
REF
RAS to CAS Delay
RAS Active Time
RAS Precharge Time
RAS to RAS Bank Active
Delay
CAS to CAS Delay
Write Command to Data-In
Delay
Data-In to Precharge
Command
Data-In to Active Command
DQM to Data-Out Hi-Z
DQM to Data-In Mask
MRS to New Command
CAS Latency
=3
CAS Latency
=2
38.5 100K 38.5 100K
15
10
1
0
2
5
2
0
2
3
-
-
-
-
-
-
-
-
-
-
16.5
11
1
0
2
5
2
0
2
3
-
-
-
-
-
-
-
-
-
-
Precharge to
Data Output
Hi-Z
2
1
1
-
-
-
-
64
2
1
1
-
-
-
-
64
2
1
1
-
-
-
-
64
2
1
1
-
-
-
-
64
2
1
1
-
-
-
-
64
2
1
1
-
-
-
-
64
2
1
1
-
-
-
-
64
2
1
1
-
-
-
-
64
2
1
1
-
-
-
-
64
CLK
CLK
CLK
ms
1
Power Down Exit Time
Self Refresh Exit Time
Refresh Time
Note :
1. A new command can be given tRRC after self refresh exit
Rev. 1.0/Jan. 02
8