Synchronous DRAM Memory 64Mbit (4Mx16bit)
HY5V66E(L)F6(P) Series
11
Preliminary
ABSOLUTE MAXIMUM RATING
Parameter
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to V
SS
Voltage on VDD supply relative to VSS
Short Circuit Output Current
Power Dissipation
Soldering Temperature
.
Time
Symbol
T
A
T
STG
V
IN
, V
OUT
V
DD,
V
DDQ
I
OS
P
D
T
SOLDER
Rating
0 ~ 70
-55 ~ 125
-1.0 ~ 4.6
-1.0 ~ 4.6
50
1
260
.
10
Unit
o
C
o
C
V
V
mA
W
o
C
.
Sec
DC OPERATING CONDITION
(T
A
= 0 to 70
o
C)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
DD,
V
DDQ
V
IH
V
IL
Min
3.0
2.0
-0.3
Typ
3.3
3.0
Max
3.6
V
DDQ+
0.3
0.8
Unit
V
V
V
Note
1
1, 2
1, 3
-
Note: 1. All voltages are referenced to V
SS
= 0V
2. VIH (max) is acceptable 5.6V AC pulse width with <=3ns of duration.
3. VIL (min) is acceptable -2.0V AC pulse width with <=3ns of duration.
AC OPERATING TEST CONDITION
(T
A
= 0 to 70
o
C,
V
DD
=3.3±0.3V, V
SS
=0V)
Parameter
AC Input High / Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise / Fall Time
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
Note 1.
Vtt=1.4V
Symbol
V
IH
/ V
IL
V
trip
t
R
/ t
F
V
outref
CL
Value
2.4 / 0.4
1.4
1
1.4
30
Unit
V
V
ns
V
pF
Note
1
Vtt=1.4V
RT=500
Ω
RT=50
Ω
Output
Output
30pF
Z0 = 50Ω
30pF
DC Output Load Circuit
AC Output Load Circuit
Rev. 0.2 / June. 2005
6
HYNIX [ HYNIX SEMICONDUCTOR ]
