IC42S16102
DC ELECTRICAL CHARACTERISTICS
(Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter
I
IL
I
OL
V
OH
V
OL
I
CC
1
Input Leakage Current
Output Leakage Current
Output High Voltage Level
Output Low Voltage Level
Operating Current
(1,2)
Test Condition
0V
≤
V
IN
≤
V
CC
, with pins other than
the tested pin at 0V
Output is disabled
0V
≤
V
OUT
≤
V
CC
I
OUT
= –2 mA
I
OUT
= +2 mA
One Bank Operation,
Burst Length=1
t
RC
≥
t
RC
(min.)
I
OUT
= 0mA
CKE
≤
V
IL
(
MAX
)
CKE
≥
V
IH
(
MIN
)
CAS
latency = 3
-5
-6
-7
—
—
—
—
-5
-6
-7
-5
-6
-7
—
Speed
Min.
–5
–10
2.4
—
—
—
—
—
—5
—6
—7
—
—
—
—
—
—
—
Max.
5
10
—
0.4
150
145
140
2
50
45
40
150
140
130
100
90
80
1
Unit
µA
µA
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
I
CC
2
I
CC
3
Precharge Standby Current
(In Power-Down Mode)
Active Standby Current
(In Non Power-Down Mode)
Operating Current
(In Burst Mode)
(1)
Auto-Refresh Current
t
CK
= t
CK
(
MIN
)
t
CK
= t
CK
(
MIN
)
I
CC
4
t
CK
= t
CK
(
MIN
)
I
OUT
= 0mA
t
RC
= t
RC
(
MIN
)
I
CC
5
I
CC
6
Self-Refresh Current
CKE
≤
0.2V
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
increases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between Vcc and GND for each
memory chip to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Icc1 and Icc4 depend on the output load.
6
Integrated Circuit Solution Inc.
DR042-0A 01/18/2005
ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
