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IC63LV1024-12K 参数 Datasheet PDF下载

IC63LV1024-12K图片预览
型号: IC63LV1024-12K
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8高速CMOS静态RAM 3.3V革命引脚 [128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT]
分类和应用: 存储静态存储器
文件页数/大小: 10 页 / 130 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IC63LV1024
128K x 8 HIGH-SPEED CMOS STATIC RAM
3.3V REVOLUTIONARY PINOUT
FEATURES
• High-speed access times:
8, 10, 12 and 15 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with
CE
and
OE
options
CE
power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 3.3V power supply
• Packages available:
– 32-pin 300mil SOJ
– 32-pin 400mil SOJ
– 32-pin 400mil TSOP-2
– 36-pin TF-BGA (6mmx8mm)
DESCRIPTION
The
ICSI
IC63LV1024 is a very high-speed, low power, 131,
072-word by 8-bit CMOS static RAM in revolutionary pinout.
The IC63LV1024 is fabricated using
ICSI
's high-perform-
ance CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields higher
performance and low power consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 250 µW (typical) with CMOS input levels.
The IS63LV1024 operates from a single 3.3V power supply
and all inputs are TTL-compatible.
The IS63LV1024 is available in 32-pin 300mil SOJ, 400mil
SOJ, 400mil TSOP-2 and 36-pin TF-BGA (6mmx8mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K X 8
MEMORY ARRAY
VCC
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
2
Integrated Circuit Solution Inc.
AHSR025-0D
04/16/2004