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IC63LV1024-12K 参数 Datasheet PDF下载

IC63LV1024-12K图片预览
型号: IC63LV1024-12K
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8高速CMOS静态RAM 3.3V革命引脚 [128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT]
分类和应用: 存储静态存储器
文件页数/大小: 10 页 / 130 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IC63LV1024
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
-8 ns
Symbol
Parameter
Write Cycle Time
CE
to Write End
Address Setup Time to
Write End
Address Hold from
Write End
Address Setup Time
WE
Pulse Width
Data Setup to Write End
Data Hold from Write End
Min.
8
7
7
0
0
7
4.5
0
0
0
Max.
4
-10 ns
Min.
10
8
8
0
0
8
6
0
0
0
Max.
5
12
9
9
0
0
9
6
0
0
0
-12 ns
Min.
Max.
6
-15 ns
Min.
15
10
10
0
0
10
7
0
0
0
Max.
7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
(4)
t
SD
t
HD
t
HZWE
(2)
WE
LOW to High-Z Output
t
LZWE
(2)
WE
HIGH to Low-Z Output
Notes:
1. Test conditions assume signal transition times of 3ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
4. Tested with
OE
HIGH.
AC WAVEFORMS
WRITE CYCLE NO. 1
(WE Controlled)
(1,2)
t
WC
ADDRESS
VALID ADDRESS
t
SA
CE
t
SCE
t
HA
WE
t
AW
t
PWE1
t
PWE2
t
HZWE
t
LZWE
HIGH-Z
D
OUT
DATA UNDEFINED
t
SD
D
IN
t
HD
DATA
IN
VALID
CE_WR1.eps
8
Integrated Circuit Solution Inc.
AHSR025-0D
04/16/2004