欢迎访问ic37.com |
会员登录 免费注册
发布采购

IS61LV6416-10T 参数 Datasheet PDF下载

IS61LV6416-10T图片预览
型号: IS61LV6416-10T
PDF下载: 下载PDF文件 查看货源
内容描述: 64K ×16高速CMOS静态与3.3 V电源RAM [64K X 16 HIGH SPEED CMOS STATIC RAM WITH 3.3 V SUPPLY]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 8 页 / 451 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
 浏览型号IS61LV6416-10T的Datasheet PDF文件第1页浏览型号IS61LV6416-10T的Datasheet PDF文件第2页浏览型号IS61LV6416-10T的Datasheet PDF文件第3页浏览型号IS61LV6416-10T的Datasheet PDF文件第4页浏览型号IS61LV6416-10T的Datasheet PDF文件第5页浏览型号IS61LV6416-10T的Datasheet PDF文件第7页浏览型号IS61LV6416-10T的Datasheet PDF文件第8页  
IS61LV6416
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
Symbol
Parameter
Write Cycle Time
CE
to Write End
Address Setup Time
to Write End
Address Hold from Write End
Address Setup Time
LB, UB
Valid to End of Write
WE
Pulse Width
Data Setup to Write End
Data Hold from Write End
Min.
8
7
7
0
0
7
7
4.5
0
—
3
-8
Max.
—
—
—
—
—
—
—
—
—
4
—
-10
Min. Max.
10
8
8
0
0
8
8
5
0
—
3
—
—
—
—
—
—
—
—
—
5
—
-12
Min. Max.
12
9
9
0
0
9
9
6
0
—
3
—
—
—
—
—
—
—
—
—
6
—
-15
Min. Max.
15
10
10
0
0
10
10
7
0
—
3
—
—
—
—
—
—
—
—
—
7
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWB
t
PWE
t
SD
t
HD
t
HZWE
 
WE
LOW to High-Z Output
t
LZWE
 
WE
HIGH to Low-Z Output
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE
LOW and
UB
or
LB,
and
WE
LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the write.
6
Integrated Circuit Solution Inc.
SR013-0C