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IDT7007S20PF 参数 Datasheet PDF下载

IDT7007S20PF图片预览
型号: IDT7007S20PF
PDF下载: 下载PDF文件 查看货源
内容描述: 高速32K ×8双端口静态RAM [HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM]
分类和应用:
文件页数/大小: 21 页 / 257 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Truth Table I: Non-Contention Read/Write Control
Inputs

CE
H
L
L
X
R/W
X
L
H
X
OE
X
X
L
H
SEM
H
H
H
X
Outputs
I/O
0-7
High-Z
DATA
IN
DATA
OUT
High-Z
Deselected: Power-Down
Write to Memory
Read Memory
Outputs Disabled
2940 tbl 02
Mode
NOTE:
1. A
0L
— A
14L
A
0R
— A
14R
Truth Table II: Semaphore Read/Write Control
(1)
Inputs
CE
H
H
L
R/W
H
OE
L
X
X
SEM
L
L
L
Outputs
I/O
0-7
DATA
OUT
DATA
IN
______
Mode
Read Semap hore Flag Data Out (I/O
0
-I/O
7
)
Write I/O
0
into Semaphore Flag
Not Allowed
2940 tbl 03
X
NOTE:
1. There are eight semaphore flags written to via I/O
0
and read from all I/O's. These eight semaphores are addressed by A
0
- A
2
.
Absolute Maximum Ratings
(1)
Symbol
V
TERM
(2)
Rating
Terminal Voltage
with Respect
to GND
Temperature
Under Bias
Storage
Temperature
DC Output
Current
Commercial
& Industrial
-0.5 to +7.0
Military
-0.5 to +7.0
Unit
V
Maximum Operating Temperature
and Supply Voltage
(1,2)
Grade
Military
Ambient
Temperature
-55
O
C to+125
O
C
0
O
C to +70
O
C
-40
O
C to +85
O
C
GND
0V
0V
0V
Vcc
5.0V
+
10%
5.0V
+
10%
5.0V
+
10%
2940 tbl 05
T
BIAS
T
STG
I
OUT
-55 to +125
-55 to +120
50
-55 to +135
-65 to +150
50
o
C
C
Commercial
Industrial
o
mA
2940 tbl 04
NOTES:
1. This is the parameter T
A
.
2. Industrial temperature: for other speeds, packages and powers contact your
sales office.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sec-tions of this specification is not implied. Exposure
to absolute maxi-mum rating conditions for extended periods may affect
reliability.
2. V
TERM
must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V
TERM
> Vcc + 10%.
Recommended Operating
Conditions
Symbol
V
CC
GND
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
4.5
0
2.2
-0.5
(1)
Typ.
5.0
0
____
____
Max.
5.5
0
6.0
(2)
0.8
Unit
V
V
V
V
2940 tbl 06
Capacitance
(T
A
= +25°C, f = 1.0mhz)
Symbol
C
IN
C
OUT
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
(2)
V
IN
= 3dV
V
OUT
= 3dV
Max.
9
10
Unit
pF
pF
2940 tbl 07
V
IH
V
IL
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 10%.
NOTES:
1. This parameter is determined by device characterization but is not production
tested. TQFP package only.
2. 3dV represents the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
5