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IDT7025S25PF 参数 Datasheet PDF下载

IDT7025S25PF图片预览
型号: IDT7025S25PF
PDF下载: 下载PDF文件 查看货源
内容描述: 高速8K ×16双口静态RAM [HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM]
分类和应用:
文件页数/大小: 20 页 / 294 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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IDT7025S/L
HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TRUTH TABLE I – NON-CONTENTION READ/WRITE CONTROL
Inputs
(1)
Outputs
CE
H
X
L
L
L
L
L
L
X
R/
W
X
X
L
L
L
H
H
H
X
OE
X
X
X
X
X
L
L
L
H
UB
X
H
L
H
L
L
H
L
X
LB
X
H
H
L
L
H
L
L
X
SEM
H
H
H
H
H
H
H
H
X
I/O
8-15
High-Z
High-Z
DATA
IN
High-Z
DATA
IN
DATA
OUT
High-Z
High-Z
I/O
0-7
High-Z
High-Z
High-Z
DATA
IN
DATA
IN
High-Z
Both Bytes Deselected
Mode
Deselected: Power Down
Write to Upper Byte Only
Write to Lower Byte Only
Write to Both Bytes
Read Upper Byte Only
DATA
OUT
Read Lower Byte Only
High-Z
Outputs Disabled
2683 tbl 03
DATA
OUT
DATA
OUT
Read Both Bytes
NOTE:
1. A
0L
— A
12L
are not equal to A
0R
— A
12R.
TRUTH TABLE II – SEMAPHORE READ/WRITE CONTROL
(1)
Inputs
Outputs
CE
H
X
H
X
L
L
R/
W
H
H
OE
L
L
X
X
X
X
UB
X
H
X
H
L
X
LB
X
H
X
H
X
L
SEM
L
L
L
L
L
L
I/O
8-15
I/O
0-7
Mode
DATA
OUT
DATA
OUT
Read Semaphore Flag Data Out
DATA
OUT
DATA
OUT
Read Semaphore Flag Data Out
DATA
IN
DATA
IN
DATA
IN
DATA
IN
Write I/O
0
into Semaphore Flag
Write I/O
0
into Semaphore Flag
Not Allowed
Not Allowed
2683 tbl 04
u
u
X
X
NOTE:
1. There are eight semaphore flags written to via I/O
0
and read from I/O
0
- I/O
15.
These eight semaphores are addressed by A
0
- A
2
.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
(2)
Rating
Commercial
Military
–0.5 to +7.0
Unit
V
Terminal Voltage –0.5 to +7.0
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage
Temperature
DC Output
Current
0 to +70
–55 to +125
–55 to +125
50
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
V
CC
GND
Parameter
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Min.
4.5
0
2.2
–0.5
(1)
Typ.
5.0
0
Max. Unit
5.5
0
6.0
(2)
0.8
V
V
V
V
2683 tbl 06
T
A
T
BIAS
T
STG
I
OUT
–55 to +125
–65 to +135
–65 to +150
50
°C
°C
°C
mA
V
IH
V
IL
NOTES:
1. V
I
L
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 0.5V.
NOTES:
2683 tbl 05
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. V
TERM
must not exceed Vcc + 0.5V for more than 25% of the cycle time
or 10ns maximum, and is limited to < 20 mA for the period over V
TERM
> Vcc + 0.5V.
CAPACITANCE
(1)
(T
A
= +25°C, f = 1.0MHz)TQFP ONLY
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output
Capacitance
Conditions
(2)
Max.
V
IN
= 3dV
V
OUT
= 3dV
9
10
Unit
pF
pF
NOTES:
2683 tbl 07
1. This parameter is determined by device characterization but is not
production tested.
2. 3dV references the interpolated capacitance when the input and output
signals switch from 0V to 3V or from 3V to 0V.
6.16
4